The SiS412DN-T1-GE3 is a high-efficiency N-channel MOSFET transistor from Vishay Siliconix, part of the TrenchFET® series. Designed for switching and power management applications, this unipolar MOSFET delivers excellent performance with low on-resistance, fast switching speed, and high current capability—ideal for laptop motherboards, DC/DC converters, and battery management systems.
Key Features:
- Type: N-Channel Power MOSFET (TrenchFET® technology)
- Voltage Rating (V<sub>DS</sub>): 30V
- Continuous Current (I<sub>D</sub>): 12A
- Pulsed Current (I<sub>DM</sub>): 30A
- Power Dissipation: 10W
- Package: PowerPAK® 1212-8 / SMD type for compact designs
- Low R<sub>DS(on)</sub> and fast switching capability
- High efficiency for portable and embedded applications
- Manufacturer: Vishay Siliconix
- IC ready stock OKSpare, IC available at OKSpare, and IC supplier OKSpare