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SiS412DN-T1-GE3 N-Channel MOSFET
Reviews
Category: SMD IC
Description
The SiS412DN-T1-GE3 is a high-efficiency N-channel MOSFET transistor from Vishay Siliconix, part of the TrenchFET® series. Designed for switching and power management applications, this unipolar MOSFET delivers excellent performance with low on-resistance, fast switching speed, and high current capability—ideal for laptop motherboards, DC/DC converters, and battery management systems.
Key Features:
- Type: N-Channel Power MOSFET (TrenchFET® technology)
- Voltage Rating (V<sub>DS</sub>): 30V
- Continuous Current (I<sub>D</sub>): 12A
- Pulsed Current (I<sub>DM</sub>): 30A
- Power Dissipation: 10W
- Package: PowerPAK® 1212-8 / SMD type for compact designs
- Low R<sub>DS(on)</sub> and fast switching capability
- High efficiency for portable and embedded applications
- Manufacturer: Vishay Siliconix
- IC ready stock OKSpare, IC available at OKSpare, and IC supplier OKSpare
Specification
Technical Summary:
The SiS412DN-T1-GE3 MOSFET uses Vishay’s TrenchFET® technology, combining high power density and low gate charge for superior switching efficiency. Commonly used in power rails, VRM stages, and load switching circuits, it offers excellent thermal stability and reliability, making it a preferred choice for laptop, industrial, and communication equipment.